曾正，重庆大学教授/博导，国家级青年人才，重庆市杰青、青拔，长期从事碳化硅功率器件封装测试与应用研究，入选中国高被引学者、全球前2%科学家、第三代半导体卓越创新青年、电力优秀青年科技人才。2009年获得武汉大学电气工程学士学位，2014年获得浙江大学电气工程博士学位，随即加入重庆大学，历任讲师（2014年）、副教授（2017年）、教授（2022年），2018-2019年在新加坡南洋理工大学从事博士后研究。主持国家级项目6项、省部级项目4项，以第一作者出版学术专著2、译著1部，以第一/通信作者发表高水平论文55篇，获得教育部自然科学一等奖，获评重庆大学最受学生欢迎的老师。

教育经历

2009-2014，浙江大学，电气工程，博士

2025-2009，武汉大学，电气工程及其自动化，学士

工作经历

2022-至今，重庆大学，电气工程学院，教授

2018-2019，新加坡南洋理工大学，电气与电子工程学院，博士后

2017-2022，重庆大学，电气工程学院，副教授

2014-2017，重庆大学，电气工程学院，讲师

代表成果

[1] 曾正. SiC功率器件的封装测试与系统集成[M]. 北京: 科学出版社, 2020.

[2] 曾正, 赵荣祥, 杨欢. 柔性并网逆变器控制技术[M]. 北京: 科学出版社, 2020.

[3] Wang Yulei, Gong Jiakun, Zeng Zheng, Wang Liang, Zou Mingrui, Gong Yiming, Liang Yuxi. Flexible 1.5-GHz probe isolation extension with high CMRR and robust dv/dt immunity empowering next-generation WBG measurement[J]. IEEE Transactions on Power Electronics, 2025, 40(1): 862-878.

[4] Zeng Zheng, Zhang Xin, Blaabjerg Frede, Miao Linjing. Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes[J]. IEEE Transactions on Power Electronics, 2020, 35(2): 1866-1881.

[5] Zeng Zheng, Zhang Xin, Li Xiaoling. Layout-dominated dynamic current imbalance in multichip power module: Mechanism modeling and comparative evaluation[J]. IEEE Transactions on Power Electronics, 2019, 34(11): 11199-11214.

已培养博士、硕士12名，指导全国大学生电子设计竞赛7项、大学生国(市)创新训练计划项目10余项、UC联合学院Coop实习10余人。

科研项目

1、国家青年人才计划项目，高压碳化硅功率器件封装集成，2023/9-2026/8，项目负责人

2、17*计划技术领域基金项目，第三代半导体功率器件***，2022/10-2024/10，项目负责人

3、国家自然科学基金面上项目，高功率密度SiC逆变器的3D封装与热管理研究，2022/1-2025/12，项目负责人

4、国家自然科学基金青年项目，车用多芯片并联SiC模块电热应力分布规律和调控方法研究，2017/1-2019/12，项目负责人

5、重庆市杰出青年科学基金项目，第三代半导体封装测试，2024/7-2027/6，项目负责人

6、重庆市青年拔尖人才计划项目，高压大容量功率半导体器件，2022/1-2024/12，项目负责人

7、企业委托开发项目，光伏用低感低热阻混合碳化硅功率模块设计与研制，2023/6-2024/7，项目负责人

8、企业委托开发项目，新能源汽车氮化镓电驱电源控制器技术研究，2022/7-2023/12，项目负责人

9、企业委托开发项目，车用多芯片并联功率模块电-热优化设计研究，2023/5-2023/12，项目负责人

10、企业委托开发项目，单面散热SiC功率模块开发，2022/4-2022/11，项目负责人

11、企业委托开发项目，车用功率模块的优化设计、封装集成与原位测试研究、2021/9-2021/12，项目负责人

12、国家重点研发计划，宽禁带半导体电机控制器开发和产业化，2017/7-2021/6，子课题负责人

13、国家重点研发计划，柔性直流输电装备压接型定制化超大功率IGBT关键技术及应用，2016/6-2019/5，子课题负责人

科研成果

[25] Gong Jiakun, Wang Yulei, Wang Liang, Zou Mingrui, Sun Peng, Liang Yuxi, Gong Yiming, Zheng Huayang, Zeng Zheng. Overcurrent protection enabled by broadband Rogowski coil current sensor for medium voltage SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2025, 40(PP): 1-1.

[24] Sun Peng, Pan Xiaofei, Zeng Zheng, Huang Yukai, Hu Yihua, Zou Mingrui. An overview of mechanical characterization for power module: Challenges, advances and future prospects[J]. IEEE Transactions on Power Electronics, 2025, 40(3): 4112-4130.

[23] Wang Yulei, Gong Jiakun, Zeng Zheng, Wang Liang, Zou Mingrui, Gong Yiming, Liang Yuxi. Flexible 1.5-GHz probe isolation extension with high CMRR and robust dv/dt immunity empowering next-generation WBG measurement[J]. IEEE Transactions on Power Electronics, 2025, 40(1): 862-878.

[22] Wang Yulei, Gong Jiakun, Zou Mingrui, Wang Liang, Gong Yiming, Jiang Chaoqiang, Zeng Zheng. Miniaturized current shunt with high bandwidth and low parasitics for high-integrated applications: Electro-thermal considerations and co-design[J]. IEEE Transactions on Power Electronics, 2024, 39(12): 15732-15747.

[21] Wang Liang, Zheng Huayang, Wang Yulei, Gong Jiakun, Hu Borong, Mu Wei, Li Jiayu, Long Teng, Zeng Zheng. Forced fluorinated liquid cooling for medium voltage SiC power modules: Concurrently addressing electrical and thermal challenges[J]. IEEE Transactions on Power Electronics, 2024, 39(12): 15622-15634.

[20] Sun Peng, Pan Xiaofei, Han Xudong, Zheng Huayang, Liang Yuxi, Hu Yihua, Niu Fuli, Zeng Zheng. Simultaneous mitigation of switching overvoltage and oscillation for SiC MOSFET via gate charge injection concept[J]. IEEE Transactions on Power Electronics, 2024, 39(11): 14376-14386.

[19] Wang Yulei, Gong Jiakun, Wang Liang, Zou Mingrui, Gong Yiming, Niu Fuli, Long Teng, Zeng Zheng. High-bandwidth differential voltage probe for accurate switching characterization of WBG devices[J]. IEEE Transactions on Power Electronics, 2024, 39(10): 12545-12557.

[18] Wang Liang, Gong Jiakun, Long Teng, Wang Yulei, Zheng Huayang, Hu Borong, Mu Wei, Zeng Zheng. A review of partial discharge in medium voltage SiC power modules under square wave excitation: Characterization, mitigation, and detection[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024, 12(4): 3588-3606.

[17] Wang Liang, Gong Jiakun, Long Teng, Blaabjerg Frede, Hu Borong, Wang Yulei, Zeng Zheng. Direct metallization-based DBC-free power modules for near-junction water cooling: Analysis and experimental comparison[J]. IEEE Transactions on Power Electronics, 2024, 39(6): 7052-7063.

[16] Sun Peng, Zou Mingrui, Wang Yulei, Gong Jiakun, Liang Yuxi, Niu Fuli, Jiang Ke, Gao Wei, Zeng Zheng. Focuses and concerns of dynamic test for wide bandgap device: A questionnaire-based survey[J]. IEEE Transactions on Power Electronics, 2023, 38(12): 15522-15534.

[15] Wang Yulei, Long Teng, Zou Mingrui, Sun Peng, Gong Jiakun, Wang Liang, Shillaber Luke, Blaabjerg Frede, Jiang Ke, Zeng Zheng. Transmission line Rogowski coil: Isolated current sensor with bandwidth exceeding 3 GHz for wide-bandgap device[J]. IEEE Transactions on Power Electronics, 2023, 38(11): 13599-13605.

[14] Sun Peng, Zou Mingrui, Niu Fuli, Liang Yuxi, Gong Jiakun, Wang Yulei, Luo Ming, Song Junwei, Zeng Zheng. Dynamic deformation oriented thermo-mechanical performance assessment for automotive power module with various PWM schemes[J]. IEEE Transactions on Power Electronics, 2023, 38(9): 10906-10916.

[13] Sun Peng, Liang Yuxi, Wang Liang, Wang Yulei, Zou Mingrui, Zeng Zheng. In situ full-field deformation characterization of power module and FEA model calibration based on stereo digital image methodology[J]. IEEE Transactions on Power Electronics, 2023, 38(7): 8430-8441.

[12] Sun Peng, Niu Fuli, Zeng Zheng, Li Kaiyan, Ou Kaihong. FEA-dominant reliability and lifetime model of double-sided cooling SiC power module[J]. IEEE Transactions on Device and Materials Reliability, 2023, 23(2): 178-186.

[11] Wang Yulei, Zeng Zheng, Long Teng, Sun Peng, Wang Liang, Zou Mingrui. Impedance-matching shunt (IM-Shunt): Current sensor with ultra-high bandwidth and extremely-low parasitics for wide-bandgap device[J]. IEEE Transactions on Power Electronics, 2022, 37(10): 11528-11533.

[10] Wang Liang, Zeng Zheng, Sun Peng, Ai Shengxiang, Zhang Jiawei, Wang Yulei. Electric-field-dominated partial discharge in medium voltage SiC power module packaging: Model, mechanism, reshaping, and assessment[J]. IEEE Transactions on Power Electronics, 2022, 37(5): 5422-5432.

[9] Sun Peng, Zeng Zheng, Wang Liang, Wang Yulei, Han Xudong. Online deformation characterization for electrothermal-mechanical effect of power module via confocal methodology[J]. IEEE Transactions on Power Electronics, 2022, 37(2): 1195-1200.

[8] Wang Liang, Zeng Zheng, Sun Peng, Yu Yue, Ou Kaihong, Wang Jin. Current-bunch concept for parasitic-oriented extraction and optimization of multi-chip SiC power module[J]. IEEE Transactions on Power Electronics, 2021, 36(8): 8593-8599.

[7] Zeng Zheng, Wang Jin, Wang Liang, Yu Yue, Ou Kaihong. Inaccurate switching loss measurement of SiC MOSFET caused by probes: Modelization, characterization, and validation[J]. IEEE Transactions on Instrumentation and Measurement, 2021, 70, 1002014.

[6] Zeng Zheng, Ou Kaihong, Wang Liang, Yu Yue. Reliability-oriented automated design of double-sided cooling power module: A thermo-mechanical-coordinated and multi-objective-oriented optimization methodology[J]. IEEE Transactions on Device and Materials Reliability, 2020, 20(3): 584-595.

[5] Zeng Zheng, Zhang Xin, Blaabjerg Frede, Chen Hao, Sun Tianfu. Stepwise design methodology and heterogeneous integration routine of air-cooled SiC inverter for electric vehicle[J]. IEEE Transactions on Power Electronics, 2020, 35(4): 3973-3988.

[4] Zeng Zheng, Zhang Xin, Blaabjerg Frede, Miao Linjing. Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes[J]. IEEE Transactions on Power Electronics, 2020, 35(2): 1866-1881.

[3] Zeng Zheng, Zhang Xin, Zhang Zhe. Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke[J]. IEEE Transactions on Industrial Electronics, 2020, 67(2): 1508-1519.

[2] Zeng Zheng, Zhang Xin, Li Xiaoling. Layout-dominated dynamic current imbalance in multichip power module: Mechanism modeling and comparative evaluation[J]. IEEE Transactions on Power Electronics, 2019, 34(11): 11199-11214.

[1] Zeng Zheng, Li Xiaoling. Comparative study on multiple degrees of freedom of gate driver for transient behavior regulation of SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2018, 33(10): 8754-8763.

学会兼职

1、中国电工技术学会，科技传播与出版专业委员会，委员

2、中国电工技术学会，电工产品环境技术专业委员会，委员

3、中国电源学会，青年工作委员会，委员

4、中国宇航学会，空间太阳能电站专业委员会委员

5、中国机械工业教育协会，电力电子与电力传动专业委员会，委员

期刊兼职

1、CSEE Journal of Power and Energy Systems，副编辑

2、中国电机工程学报，青年学科编辑

3、重庆大学学报，青年编委

4、电工技术学报，专辑编辑